| PART |
Description |
Maker |
| MFK2807D/883 MFK2805S/883 MFK2805D/883 MFK2812D/88 |
MFK S ingle and D ual D C-DC Converters 16 to 50 vol ts i npu t ?25 Watt
|
Interpoint Corporation ...
|
| W83L784R |
Notebook H/W Monitor: 3 Temp.(Thermal Diode), 4 Vol., 2 Smart Fan, PWR OK, PWR Down Mode
|
Winbond Electronics
|
| FF600R16KF4 |
Maximum rated values / Electrical properties
|
eupec GmbH
|
| M68732SHA 68732SHA |
RF POWER MODULE SILICON MOS FET POWER AMPLIFIER, 470-520 MHz 6.7W FM PORTABLE
SILICON MOS FET POWER AMPLIFIER, 470-520MHz, 6.7W, FM PORTABLE
SILICON MOS FET POWER AMPLIFIER, 470-520MHZ 6.7W FM PORTABLE
From old datasheet system
|
Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| MKT1817 |
C-values 1000 pF - 1.0 μF, Voltage 63 - 400 VDC, PCM5
|
Vishay
|
| FS30R06XL4 |
H?chstzul?ssige Werte / maximum rated values
|
Infineon Technologies AG
|
| NTHS0402 NTHS0805 NTHS0603 NTHS1206N06N2201JE |
Extended resistance values available in standard sizes, Allows design flexibility for use with hybrid circuitry
|
Vishay Siliconix
|
| BSM75GB120DLC |
Hchstzulssige Werte Maximum rated values 170 A, 1200 V, N-CHANNEL IGBT
|
Infineon Technologies AG
ETC
EUPEC[eupec GmbH]
|
| BSM35GD120DLC BSM35GD120DLCE3224 |
High Efficient Rectifier Diodes
IGBT-Module Maximum rated values
|
eupec GmbH
|
| DPP4P15K-F DPP4P1K-F DPP6P1K-F DPP1S33K-F DPP1S47K |
Polypropylene Radial Leaded Film Capacitors High Frequency Precise Values
|
Cornell Dubilier Electronics
|
